| \? VS-50WQ10FNPbF www.visha .com - - 7 y Vlshay Semiconductors 1000 100 E m 2 V 3 : 100 E I M 2 H .r: U 0 1 w 5 E -o 3 n 3_. E 10 > 0.01 L o _ 3 n:_r: 0 001 ffffffffff 1 0000‘ ZZZZZZZZZZ0 0.5 10 1.5 2.0 25 3.0 3.5 0 10 20 30 40 50 60 70 80 90 100 VFM - Forward Voltage Drop (V) VR - Reverse voltage (V) Fig. 1 — Maximum Forward Voltage Drop Characteristics Fig. 2 — Typical Values of Reverse Current vs. Reverse Voltage 1000 E 50U:E'6N%U 100: .2'6:31II- 0 10 V“ — Reverse voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 5-’ I,’L)-oW E o.EToE3J:'- Smgle pul?e ' 1 Dut factor D : I /I I th I t - y ‘ 2 2 ( erma Iesis ance) 2 Peak TJ : PDM X ZWC + TC I .Ni -0.00001 0.0001 0.001 0.01 01 1 I1 — Rectangular Pulse Duration (5) Fig. 4 - Maximum Thermal Impedance Zmdc Characteristics Revision: 29-May?13 3 Document Number: 94235 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiQdesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/ooc?91000 |